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Often tied together to provide grounding and shielding. Drain (D): The output lead.
In the world of RF (Radio Frequency) design, certain components achieve legendary status not because of flashy marketing, but due to pure performance and reliability. The is one such component. While it is now considered an obsolete or "end-of-life" (EOL) part, this N-channel dual-gate MOSFET remains highly sought after by vintage radio restorers, HF amplifier builders, and electronics hobbyists. 3sk41 datasheet
The 3SK41 is designed for low-noise, high-gain performance at high frequencies. Below are the typical parameters for this device: Drain-Source Voltage ( cap V sub cap D cap S end-sub Drain Current ( cap I sub cap D Power Dissipation ( cap P sub cap D 250mW (0.25W) Package Type: TO-72 (4-lead metal can) Drain-Source On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub Functional Overview Often tied together to provide grounding and shielding
Due to its age, it is frequently encountered in vintage "hybrid" transceivers (like Kenwood models) and is often replaced with more modern components for better performance. Key Technical Specifications The is one such component
You can access the full technical PDF files through these sources:
In RF receivers, one gate can be used for the signal input while the second gate handles an AGC voltage. This allows the circuit to dynamically adjust gain based on signal strength without detuning the input. Mixing Capabilities:
Often tied together to provide grounding and shielding. Drain (D): The output lead.
In the world of RF (Radio Frequency) design, certain components achieve legendary status not because of flashy marketing, but due to pure performance and reliability. The is one such component. While it is now considered an obsolete or "end-of-life" (EOL) part, this N-channel dual-gate MOSFET remains highly sought after by vintage radio restorers, HF amplifier builders, and electronics hobbyists.
The 3SK41 is designed for low-noise, high-gain performance at high frequencies. Below are the typical parameters for this device: Drain-Source Voltage ( cap V sub cap D cap S end-sub Drain Current ( cap I sub cap D Power Dissipation ( cap P sub cap D 250mW (0.25W) Package Type: TO-72 (4-lead metal can) Drain-Source On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub Functional Overview
Due to its age, it is frequently encountered in vintage "hybrid" transceivers (like Kenwood models) and is often replaced with more modern components for better performance. Key Technical Specifications
You can access the full technical PDF files through these sources:
In RF receivers, one gate can be used for the signal input while the second gate handles an AGC voltage. This allows the circuit to dynamically adjust gain based on signal strength without detuning the input. Mixing Capabilities: